? ? ? ? guilin strong micro-electronics co.,ltd. gm a 1162( ? 2s a1 162) features c pnp general purpose transistor maximum ratings ~? characteristic ? symbol ? rating ~? unit collector-emitter voltage ?O - lO? v ceo - 50 v collector-base voltage ?O - O? v cbo -5 0 v emitter-base voltage lO - O? v ebo - 5.0 v collector current - continuous ?O - Bm ic - 1 5 0 ma thermal characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 h?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ total device dissipation ? alumina substrate Xr ,(2)t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg -55to+150
? ? ? ? guilin strong micro-electronics co.,ltd. gm a 1162( ? 2s a1 162) device marking gm a 1162 ( ? 2s a1 162) h fe :70-140=so; 120-240=sy; 200-400=sg electrical characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? typ e ? ma x ? unit off characteristics ? emitter cutoff current lO? (v eb =-5.0v,i c =0) i ebo -0.1 u a collector cutoff current ?O? (v cb =-50v,i e =0) i cbo -0.1 u a collector saturation voltage ?O?? (ic=-100ma,i b =-10ma) v ce(sat) -0.1 -0.3 v base saturation voltage O?? (ic=-100ma,i b =-10ma) v b e(sat) - 1.0 v dc current gain ? (v ce =-6.0v,i c =-2.0ma) h fe 70 400 gain bandwidth product ?e (v ce =-10v,i c =-1.0ma) f t 80 mhz noise figure S (v ce =-6v,ic=-0.1ma,f=1khz,rg=10k ) nf 1.0 10 db output capacitance ? (v cb =-10v,i e =0,f=1.0mhz) c ob 4.0 7.0 pf 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina.
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